PART |
Description |
Maker |
NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm. InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm. InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm. InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm. InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm. InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
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NEC
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NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
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CEL[California Eastern Labs] http://
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NX7303CA-CC NX7303BA-CC NX7303BA |
InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION 1310 nm InGaAsP MQW FP laser diode for 155 Mb/s applications. With SC-UPC connector. Vertical mount flange.
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http:// CEL[California Eastern Labs] NEC
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ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode InGaAsP-MQW-FP LASER DIODES InGaAsP - MQW - FP LASER DIODES
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Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
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NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
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NEC, Corp. NEC Corp. NEC[NEC]
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NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用 CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用 CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用 ER 8C 8#12 SKT RECP LINE
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NEC, Corp. NEC Corp. NEC[NEC]
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ML776H10 ML7XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES
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Mitsubishi Electric Corporation
|
KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
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KODENSHI KOREA CORP.
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NX6514EH NX6514EH-AZ |
1 550 nm InGaAsP MQW-DFB LASER DIODE
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California Eastern Labs
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NX5312_06 NX5312 NX5312EH-AZ NX5312EK-AZ NX531206 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
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CEL[California Eastern Labs]
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NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
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California Eastern Labs
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NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
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California Eastern Laboratories
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